| PART |
Description |
Maker |
| HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| HM5212165F HM5212805FLTD-B60 |
128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) 128MLVTTL接口的SDRAM28MLVTTL接口同步的DRAM
SYNCHRONOUS DRAM, PDSO54
|
Fairchild Semiconductor, Corp.
|
| M2V28S20TP M2V28S20TP-6 M2V28S20TP-7 M2V28S20TP-8 |
128M Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9J |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
NEC[NEC]
|
| DPSD128MX4WY5-DP-XX15I |
128M X 4 SYNCHRONOUS DRAM MODULE, 15 ns, PDSO54 LEADLESS, TSOP-54
|
Spacecraft Components, Corp.
|
| HY57V28162 HY57V281620HCT HY57V281620HCLT |
8Mx16|3.3V|4K|6|SDR SDRAM - 128M
4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| EDS1232CASE-1A-E EDS1232CASE-1AL-E |
ER 8C 7#16 1#12 PIN RECP LINE 4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
128M bits SDRAM (4M words x 32 bits) 128兆位的SDRAM分字× 32位）
|
Elpida Memory, Inc.
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| PD45128163G5-A10LI-9JF PD45128163G5-A80LI-9JF PD45 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) 128兆位同步DRAM 4银行，LVTTL水树（宽温度范围
Hook-Up Wire; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Color:Yellow; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
Hook-Up Wire; Conductor Size AWG:30; No. Strands x Strand Size:7 x 38; Jacket Color:Orange; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
|
Elpida Memory, Inc.
|
